Generation and Controlling the Trap in Absorbent Germanium Oxide Film
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=8/a=081101/pdf
Reference11 articles.
1. (Invited) Past, Present and Future: SiGe and CMOS Transistor Scaling
2. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
3. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
4. Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices
5. Evaluation of GeO desorption behavior in the metal/GeO2/Ge structure and its improvement of the electrical characteristics
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. (Invited) Reactivity of Water Vapor with Ultrathin GeO2/Ge and SiO2/Si Structures Investigated by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy;ECS Transactions;2017-08-15
2. Water-Adsorbed Ultrathin GeO2/Ge and SiO2/Si Structure Studied In Situ by Near-Ambient-Pressure X-ray Photoelectron Spectroscopy;Hyomen Kagaku;2017
3. Comparative study of GeO2/Ge and SiO2/Si structures on anomalous charging of oxide films upon water adsorption revealed by ambient-pressure X-ray photoelectron spectroscopy;Journal of Applied Physics;2016-09-07
4. The Improvement of GeO2 Film Characteristics on Ge Substrates Using Ultrathin Hf Metal Deposition Followed by Annealing;ECS Transactions;2016-08-18
5. Observation of Adsorbed Water on Ultrathin GeO2/Ge(100) by Ambient-Pressure X-ray Photoelectron Spectroscopy (AP-XPS);Journal of the Vacuum Society of Japan;2015
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