Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal–Insulator–Semiconductor Diode-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal–Insulator–Semiconductor Diode

Published:2011-01-20 Issue: Volume:50 Page:01BG02
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamakami Tomohiko,Suzuki Shinichiro,Henmi Mitsunori,Murata Yusuke,Hayashibe Rinpei,Kamimura Kiichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC

2. Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH3

3. Characterization of Metal–Insulator–Semicomductor Capacitors with Insulating Nitride Films Grown on 4H-SiC

4. X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source

5. Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low Gate Leakage Current and Interface State Density of Atomic Layer Deposition Al2O3 SiC MOS Device with NH3 Plasma Treatment;Science of Advanced Materials;2016-09-01

2. Optimising the Rectification Ratio of Schottky Diodes in n-SiC and n-Si by TCAD;MRS Advances;2016-05-16

3. Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases;Materials Science Forum;2015-06

4. SiC Nitridation by NH3 Annealing and Its Effects in MOS Capacitors with Deposited SiO2 Films;Journal of Electronic Materials;2015-04-11

5. Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO₂/SiC MIS Structure;Materials Science Forum;2013-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3