Abstract
The mixed gas of nitrogen and hydrogen was used for the plasma nitridation of SiC surface.A small amount of hydrogen was effective to activate the nitridation reaction and suppress the oxidationreaction. The interface properties were improved by using nitride layer as an interfacial bufferlayer of SiC MIS structure.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. L. YingShen, S. Hashimoto, K. Abe, R. Hayashibe, T. Yamakami, M. Nakao, and K. Kamimura: Jpn. J. Appl. Phys. 44, 673 (2005).
2. Y. Ishida, C. Chen, M. Hagihara, T. Yamakami, R. Hayashibe, K. Abe and K. Kamimura: Jpn. J. Appl. Phys. 47, 676 (2008).
3. T. Yamakami, S. Suzuki, M. Hemmi, Y. Murata, R. Hayashibe and K. Kamimura, Jpn J. Appl. Phys. Vol. 50, 01BG02 (2011).
4. T. Sakai, M. Hemmi, Y. Murata, T. Yamakami, R. Hayashibe, Y. Omuma and K. Kamimura, Materials Science Forum Vols. 17-720, 725 (2012).
5. M. Hemmi, T. Sakai , T. Yamakami, R. Hayashibe and K. Kamimura, Materials Science Forum Vols. 740-742, 805 (2013).