Abstract
The SiO2 layer was deposited on the 4H-SiC Si face by the thermal decomposition of tetraethylorthosilicate(TEOS) in N2 atmosphere to from MIS diodes. The post deposition annealing was effective to improve the interface properties. The interface state density of the deposited SiO2/SiC MIS structure was estimated to be the order of 1011 cm-2eV-1 by Terman method. The direct nitridation of SiC surface prior to the deposition of the SiO2 layer was effective to reduce the interface state density.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
2 articles.
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