Air-Annealing Effects for Pt/Ti Gate Si-Metal–Oxide–Semiconductor Field-Effect Transistors Hydrogen Gas Sensor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=4/a=047201/pdf
Reference7 articles.
1. A hydrogen−sensitive MOS field−effect transistor
2. Blister formation in Pd gate MIS hydrogen sensors
3. Stabilization of MISFET hydrogen sensors
4. Hydrogen and ammonia response of metal‐silicon dioxide‐silicon structures with thin platinum gates
5. Oxygen interference mechanism of platinum–FET hydrogen gas sensor
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1. Pt–Ti–O gate silicon–metal–insulator–semiconductor field-effect transistor hydrogen gas sensors in harsh environments;Japanese Journal of Applied Physics;2016-05-26
2. Hydrogen-induced Dipoles and Sensing Principles of Pt-Ti-O Gate Si-MISFET Hydrogen Gas Sensors;Procedia Engineering;2014
3. Sensing properties of resistive-type hydrogen sensors with a Pd–SiO2 thin-film mixture;International Journal of Hydrogen Energy;2013-01
4. A Current Transport Mechanism on the Surface of Pd-SiO2Mixture for Metal-Semiconductor-Metal GaAs Diodes;Advances in Materials Science and Engineering;2013
5. Unidirectional sensing characteristics of structured Au–GaN–Pt diodes for differential-pair hydrogen sensors;International Journal of Hydrogen Energy;2012-12
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