Hydrogen-induced Dipoles and Sensing Principles of Pt-Ti-O Gate Si-MISFET Hydrogen Gas Sensors
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics
Reference6 articles.
1. Air-Annealing Effects for Pt/Ti Gate Si-Metal–Oxide–Semiconductor Field-Effect Transistors Hydrogen Gas Sensor
2. A Pt–Ti–O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor
3. Pt–Ti–O Gate Si-MISFET Hydrogen Gas Sensors-Devices and Packagings
4. Langmuir analysis on hydrogen gas response of palladium-gate FET
5. T. Usagawa et al, DOI 10.5162/IMCS2012/1.5.3 (2012Nuremberg, Germany).
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4. Imaging of potential gradient on platinum induced by hydrogen adsorption;Applied Physics Letters;2017-07-03
5. Pt–Ti–O gate silicon–metal–insulator–semiconductor field-effect transistor hydrogen gas sensors in harsh environments;Japanese Journal of Applied Physics;2016-05-26
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