CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD–Aluminum Oxide-Reference-Cited by-同舟云学术

CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD–Aluminum Oxide

Published:2024-05-10 Issue:10 Volume:24 Page:3020
ISSN:1424-8220
Container-title:Sensors
language:en
Short-container-title:Sensors

Author:

Elshaer Adham¹²,Ecoffey Serge¹²^ORCID,Jaouad Abdelatif¹²,Monfray Stephane²³,Drouin Dominique¹²

Affiliation:

1. Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boul. Université, Sherbrooke, QC J1K 0A5, Canada

2. Laboratoire Nanotechnologies Nanosystemes (LN2) CNRS IRL-3463, 3000 Boul. Université, Sherbrooke, QC J1K 0A5, Canada

3. STMicroelectronics 850, rue Jean Monnet, 38926 Crolles, France

Abstract

In this study, a p-Si/ALD-Al2O3/Ti/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al2O3 has been chosen as it can be integrated into the back end of the line (BEOL) or in CMOS, post processing. The device response and recovery are demonstrated with good correlation between the capacitance variation and the hydrogen concentration. Detection down to 20 ppm at 140 °C was obtained and a response time of 56 s for 500 ppm was recorded.

Funder

Natural Sciences and Engineering Research Council of Canada

Laboratoire Nanotechnologies Nanosystemes

Centre National de la Recherche Scientifique

Université de Sherbrooke

Université de Grenoble Alpes

Ecole Centrale Lyon

Institut National des Sciences Appliquées (INSA) Lyon

Publisher

MDPI AG

Link

https://www.mdpi.com/1424-8220/24/10/3020/pdf

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