A Pt–Ti–O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor
Author:
Affiliation:
1. Advanced Research Laboratory, Hitachi, Ltd., Hatoyama, Saitama 350-0395, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference20 articles.
1. A hydrogen−sensitive MOS field−effect transistor
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3. Hydrogen interaction with platinum and palladium metal–insulator–semiconductor devices
4. Y. Morita, K. Nakamura, and C. Kim, Sens. ActuatorsSEACDX0250-6874 B33, 96 (1996).
5. Blister formation in Pd gate MIS hydrogen sensors
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