Sensing properties of resistive-type hydrogen sensors with a Pd–SiO2 thin-film mixture-Reference-Cited by-同舟云学术

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Sensing properties of resistive-type hydrogen sensors with a Pd–SiO2 thin-film mixture

Published:2013-01 Issue:1 Volume:38 Page:313-318
ISSN:0360-3199
Container-title:International Journal of Hydrogen Energy
language:en
Short-container-title:International Journal of Hydrogen Energy

Author:

Lo Chieh,Tan Shih-Wei,Wei Chih-Yin,Tsai Jung-Hui,Lour Wen-Shiung

Publisher

Elsevier BV

Subject

Energy Engineering and Power Technology,Condensed Matter Physics,Fuel Technology,Renewable Energy, Sustainability and the Environment

Reference26 articles.

1. A step on the road to hydrogen civilization;Boltsov;Int J Hydrogen Energy,2002

2. A hydrogen sensitive Pd-gate MOS transistor;Lundstrom;J Appl Phys,1975

3. Hydrogen sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor;Liu;IEEE Trans Electron Devices,2001

4. Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen sensing Schottky diode;Lin;Sens Actuators B,2003

5. Comprehensive study of hydrogen sensing characteristics of Pd metal–oxide–semiconductor (MOS) transistors with Al0.24Ga0.76As and In0.49Ga0.51P Schottky contact layers;Tsai;Sens Actuators B,2007

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1. Quantitative hydrogen and methane gas sensing via implementing AI based spectral analysis of plasma discharge;International Journal of Hydrogen Energy;2024-01

2. Composite Silica‐Based Films as Platforms for Electrochemical Sensors;The Chemical Record;2023-09-22

3. Temperature dependence of sensing properties of hydrogen-sensitive extended-base heterojunction bipolar transistors;International Journal of Hydrogen Energy;2022-11

4. Nanostructured WO3 based gas sensors: a short review;Sensor Review;2021-09-15

5. Hydrogen wide area monitoring of LH2 releases;International Journal of Hydrogen Energy;2021-03

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