Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor-Reference-Cited by-同舟云学术

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Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor

Published:2001 Issue:9 Volume:48 Page:1938-1944
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wen-Chau Liu ,Hsi-Jen Pan ,Huey-Ing Chen ,Kun-Wei Lin ,Shiou-Ying Cheng ,Kuo-Hui Yu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/20433/00944180.pdf?arnumber=944180

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4. Room-Temperature Hydrogen- and Ammonia Gas-Sensing Characteristics of a GaN-Based Schottky Diode Synthesized With a Hybrid Surface Structure;IEEE Transactions on Electron Devices;2021-02

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