A Current Transport Mechanism on the Surface of Pd-SiO2Mixture for Metal-Semiconductor-Metal GaAs Diodes

Author:

Tan Shih-Wei1,Lai Shih-Wen1

Affiliation:

1. Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung 202, Taiwan

Abstract

This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2into a Pd metal. The Schottky emission process, where the thermionic emission both over the metal-semiconductor barrier and over the insulator-semiconductor barrier is considered on the carrier transport of a mixed contact of Pd and SiO2(MMO) MSM diodes, is analyzed. The image-force lowering is accounted for. In addition, with the applied voltage increased, the carrier recombination is thus considered. The simulation data are presented to explain the experimental results clearly.

Funder

National Taiwan Ocean University

Publisher

Hindawi Limited

Subject

General Engineering,General Materials Science

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