Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=5/a=051002/pdf
Reference10 articles.
1. Near-Field Magnetophotoluminescence Spectroscopy of Composition Fluctuations in InGaAsN
2. Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
3. Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. Nature of the bulk defects in GaAs through high-temperature quenching studies
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