Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source-Reference-Cited by-同舟云学术

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Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source

Published:2007-05-08 Issue:5A Volume:46 Page:2844-2847
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nishimura Kenichi,Lee Hae-Seok,Suzuki Hidetoshi,Ohshita Yoshio,Yamaguchi Masafumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference17 articles.

1. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source

2. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

3. Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

4. Incorporation of N into GaAsN under N overpressure and underpressure conditions

5. Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. N–H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy;Journal of Crystal Growth;2017-06

2. Chemical beam epitaxy of GaAs 1-x N x using MMHy and DMHy precursors, modeled by ab initio study of GaAs(100) surfaces stability over As 2 , H 2 and N 2;Journal of Crystal Growth;2017-06

3. Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes;Journal of Alloys and Compounds;2015-11

4. Effects of source gas molecules on N–H- and N–D-related defect formations in GaAsN grown by chemical beam epitaxy;Japanese Journal of Applied Physics;2015-03-13

5. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy;Journal of Applied Physics;2015-01-28

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