Analysis of Current Transport Mechanisms in GaAsN Homojunction Solar Cell Grown by Chemical Beam Epitaxy-Reference-Cited by-同舟云学术

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Analysis of Current Transport Mechanisms in GaAsN Homojunction Solar Cell Grown by Chemical Beam Epitaxy

Published:2013-04 Issue:2 Volume:3 Page:909-915
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Bouzazi Boussairi,Kojima Nobuaki,Ohshita Yoshio,Yamaguchi Masafumi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/6481434/06472006.pdf?arnumber=6472006

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs1-xNx candidate material for a high efficiency based homojunction solar cell;Experimental and Theoretical NANOTECHNOLOGY;2021-09-15

2. Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell;Energies;2021-07-31

3. The Influence of the Rapid Thermal Annealing Process on Defect Distribution in GaAsN p-i-n Structures for Solar Cells;2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM);2020-10-11

4. Recent results for concentrator photovoltaics in Japan;Japanese Journal of Applied Physics;2016-03-11

5. Effect of surface morphology on the density of energy states in GaAsN grown by chemical beam epitaxy;Japanese Journal of Applied Physics;2014-01-01

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