Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=1/a=012103/pdf
Reference10 articles.
1. GaInNAsSb for 1.3-1.6-μm-long wavelength lasers grown by molecular beam epitaxy
2. Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy
3. Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3 µm InGaAsN Vertical Cavity Surface Emitting Lasers
4. Effect of the unintentional incorporation of Al during the molecular beam epitaxial growth of GaInNAs quantum well
5. Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
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3. Performance Improvement of GaN-Based Light-Emitting Diodes With a Microhole Array, 45° Sidewalls, and a SiO2 Nanoparticle/Microsphere Passivation Layer;IEEE Transactions on Electron Devices;2019-01
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