Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy

Published:2008-02-29 Issue: Volume:1 Page:035004
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Wu Shudong,Kato Masakazu,Uchiyama Masayuki,Higashi Kotaro,Ishikawa Fumitaro,Kondow Masahiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/1/i=3/a=035004/pdf

Reference14 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Control of structural defects in group III V N alloys grown on Si

3. Low threshold InGaAsN/GaAs lasers beyond 1500nm

4. Recent Progress on 1.55-$\mu{\hbox {m}}$ Dilute-Nitride Lasers

5. Light emitting diodes based on GaPN/Si for optoelectronic integrated circuits

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