Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1567810
Reference7 articles.
1. Data transmission up to 10 Gbit/s with 1.3 [micro sign]m wavelength InGaAsN VCSELs
2. OC-48 capable InGaAsN vertical cavity lasers
3. Electrically pumped 10 Gbit∕s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region
4. Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition
5. Low-Temperature Metal-Organic Vapor-Phase Epitaxy Growth and Performance of 1.3-µm GaInNAs/GaAs Single Quantum Well Lasers
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1. High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes;Advances in Optical Technologies;2012-11-11
2. Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow;Applied Physics Express;2010-12-16
3. Unintentional aluminum incorporation related to the introduction of nitrogen gas during the plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2009-03
4. Effect of the unintentional incorporation of Al during the molecular beam epitaxial growth of GaInNAs quantum well;physica status solidi (c);2008-07
5. Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy;Applied Physics Express;2008-02-29
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