Effect of the unintentional incorporation of Al during the molecular beam epitaxial growth of GaInNAs quantum well-Reference-Cited by-同舟云学术

Effect of the unintentional incorporation of Al during the molecular beam epitaxial growth of GaInNAs quantum well

Published:2008-07 Issue:9 Volume:5 Page:2736-2739
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Wu S. D.,Kato M.,Uchiyama M.,Higashi K.,Ishikawa F.,Kondow M.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference10 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. Gas-source MBE of GaInNAs for long-wavelength laser diodes

3. Molecular beam epitaxy of GaNAs and GaInNAs

4. Low threshold InGaAsN/GaAs lasers beyond 1500nm

5. T. Takeuchi, Y. Chang, M. Leary, D. Mars, A. Tandon, C. Lin, R. Twist, S. Belov, D. Boure, M. Tan, D. Roh, Y. Song, L. Mantese, and H. Luan, IEEE LEOS 2003 Annual Meeting, MD1, 2003, Tucson.

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1. Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity;Japanese Journal of Applied Physics;2011-10-20

2. Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity;Japanese Journal of Applied Physics;2011-10-01

3. Band gap engineering with sub-monolayer nitrogen insertion into InGaAs/GaAs quantum well;Journal of Crystal Growth;2011-05

4. Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow;Applied Physics Express;2010-12-16

5. Unintentional aluminum incorporation related to the introduction of nitrogen gas during the plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2009-03