Author:
Ishikawa Fumitaro,Morifuji Masato,Nagahara Kenichi,Uchiyama Masayuki,Higashi Kotaro,Kondow Masahiko
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Cited by
7 articles.
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1. Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells;Applied Physics Letters;2017-05-15
2. Studying the formation of nitrogen δ-doped layers on GaAs(001) using reflection high-energy electron diffraction;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-03
3. Formation of Minibands on Superlattice Structure with Periodically Arranged δ-Doped Nitrogen into GaAs;Applied Physics Express;2013-04-01
4. Strain-induced composition limitation in nitrogen δ-doped (In,Ga)As/GaAs quantum wells;Applied Physics Letters;2012-04-23
5. Molecular beam epitaxial growth and characterization of nitrogen δ-doped AlGaAs/GaAs quantum wells;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03