Formation of Minibands on Superlattice Structure with Periodically Arranged δ-Doped Nitrogen into GaAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=4/a=041002/pdf
Reference37 articles.
1. GaAs and Related Materials
2. Bound to continuum superlattice miniband long wavelength GaAs/AlxGa1−xAs photoconductors
3. Band Anticrossing in GaInNAs Alloys
4. Direct measurement and analysis of the conduction band density of states in dilutedGaAs1−xNxalloys
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1. Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method;Japanese Journal of Applied Physics;2020-02-28
2. Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure;Optical Materials;2019-03
3. Intermediate band formation in a δ -doped like QW superlattices of GaAs/Al x Ga 1−x As for solar cell design;Superlattices and Microstructures;2018-03
4. Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells;Applied Physics Letters;2017-05-15
5. Perturbation analysis on large band gap bowing of dilute nitride semiconductors;Physica B: Condensed Matter;2016-03
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