Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3 µm InGaAsN Vertical Cavity Surface Emitting Lasers-Reference-Cited by-同舟云学术

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Al Contamination in InGaAsN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition and 1.3 µm InGaAsN Vertical Cavity Surface Emitting Lasers

Published:2004-04-09 Issue:4A Volume:43 Page:1260-1263
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takeuchi Tetsuya,Chang Ying-Lan,Leary Michael,Mars Dan,Song Yoon Kyu,Roh S. David,Luan Hsin-Chiao,Mantese Lucy-Marie,Tandon Ashish,Twist Rosemary,Belov Svetlana,Bour David,Tan Michael

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow;Applied Physics Express;2010-12-16

2. External-Cavity Surface-Emitting Diode Lasers;Semiconductor Disk Lasers;2010-07-16

3. Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy;Japanese Journal of Applied Physics;2009-12-21

4. Unintentional aluminum incorporation related to the introduction of nitrogen gas during the plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2009-03

5. Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures;Nanotechnology;2008-10-02

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