Carrier Transport and Effective Barrier Height of Low Resistance Metal Contact to Highly Mg-Doped p-GaN
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=8/a=085701/pdf
Reference12 articles.
1. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
2. Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment
3. Low-resistance ohmic contacts to p-type GaN
4. Ohmic and degradation mechanisms of Ag contacts on p-type GaN
5. Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1−xN capping layers
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3. Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity;Applied Physics Letters;2023-08-28
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5. Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method;Journal of the Korean Physical Society;2018-01
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