Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1−xN capping layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1445807
Reference9 articles.
1. GaN: Processing, defects, and devices
2. Growth and applications of Group III-nitrides
3. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
4. Low-resistance ohmic contacts to p-type GaN
5. Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al/sub 0.15/Ga/sub 0.85/N/GaN superlattice
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4. Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs;Applied Physics Letters;2017-07-31
5. Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer;Chinese Physics B;2015-11
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