Effects of V and Gd doping on novel positive colossal electroresistance and quantum transport in PbPdO<sub>2</sub> thin films with (002) preferred orientation-Reference-Cited by-同舟云学术

Effects of V and Gd doping on novel positive colossal electroresistance and quantum transport in PbPdO₂ thin films with (002) preferred orientation

Published:2024 Issue:19 Volume:26 Page:14244-14255
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Jia Hai¹²^ORCID,Zeng Liqiang²,Guo Wenti²,Lin Zhiya¹²,Zhang Jian-Min²^ORCID,Huang Xiaohui³^ORCID,Huang Zhigao²^ORCID,Ying Shaoming³

Affiliation:

1. College of Mathematics and Physics, Ningde Normal University, Ningde 352100, China

2. Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, China

3. Fujian Provincial Key Laboratory of Featured Materials in Biochemical Industry, College of Chemistry and Materials, Ningde Normal University, Ningde 352100, China

Abstract

In this work, PbPd0.9V0.1O2 and PbPd0.9Gd0.1O2 films with (002) preferred orientation were prepared using a pulsed laser deposition technique. The positive CER effect were found in V and Gd doped films, and its physical mechanism was investigated.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Fujian Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP00837E

Reference57 articles.

1. Zero-gap materials for future spintronics, electronics and optics

2. Dirac spin-gapless semiconductors: promising platforms for massless and dissipationless spintronics and new (quantum) anomalous spin Hall effects

3. Metal–insulator transition and large thermoelectric power of a layered palladium oxide: PbPdO2

4. Cu doping and pressure effect on a layered palladium oxide: PbPdO2