Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment

Author:

Kim Sang-Woo,Lee Ji-Myon,Huh Chul,Park Nae-Man,Kim Hyun-Soo,Lee In-Hwan,Park Seong-Ju

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 45 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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2. Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED;Materials Science in Semiconductor Processing;2020-02

3. Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m-plane GaN substrates;Applied Physics Express;2018-10-16

4. Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer;Materials Research Bulletin;2016-10

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