Enhanced light extraction efficiency of GaN-based light-emittng diodes by nitrogen implanted current blocking layer
Author:
Funder
Ministry of Education
LG Innotek
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Nitride-Based LEDs With a Hybrid Al Mirror $+ {\hbox {TiO}} _{2} /{\hbox {SiO}}_{2}$ DBR Backside Reflector
2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
3. Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
4. Enhanced emission efficiency of GaN∕InGaN multiple quantum well light-emitting diode with an embedded photonic crystal
5. Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer
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1. Nanoporous Nitrogen-Ion-Implanted InGaN Resonant-Cavity Light-Emitting Diodes for Vertical-Cavity Surface-Emitting Lasers;ACS Applied Nano Materials;2024-03-15
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3. Synthesis of TiO 2 spheres and their utilization in the enhancement light-extraction efficiency of WLEDs;Materials Research Bulletin;2017-10
4. Improved full-color emission and switched luminescence in single Ca3(PO4)2: Dy3+, Eu3+ phosphors for white LEDs;Journal of Alloys and Compounds;2017-03
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