Self-Aligned Inversion-Channel In$_{0.53}$Ga$_{0.47}$As Metal–Oxide–Semiconductor Field-Effect Transistors withIn-situDeposited Al$_{2}$O$_{3}$/Y$_{2}$O$_{3}$ as Gate Dielectrics-Reference-Cited by-同舟云学术

Self-Aligned Inversion-Channel In$_{0.53}$Ga$_{0.47}$As Metal–Oxide–Semiconductor Field-Effect Transistors withIn-situDeposited Al$_{2}$O$_{3}$/Y$_{2}$O$_{3}$ as Gate Dielectrics

Published:2011-11-02 Issue:11 Volume:4 Page:114202
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Chang Pen,Chiu Han-Chin,Lin Tsung-Da,Huang Mao-Lin,Chang Wen-Hsin,Wu Shao-Yun,Wu Kang-Hua,Hong Minghwei,Kwo Jueinai

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=11/a=114202/pdf

Reference11 articles.

1. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

2. Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$

3. Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors

4. Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

5. Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states

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5. Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3 as a gate dielectric;Japanese Journal of Applied Physics;2022-02-10