Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2012-04-20 Issue: Volume:51 Page:04DA05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayashida Tetsuro,Endo Kazuhiko,Liu Yongxun,O'uchi Shin-ichi,Matsukawa Takashi,Mizubayashi Wataru,Migita Shinji,Morita Yukinori,Ota Hiroyuki,Hashiguchi Hiroki,Kosemura Daisuke,Kamei Takahiro,Tsukada Junichi,Ishikawa Yuki,Yamauchi Hiromi,Ogura Atsushi,Masahara Meishoku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

1. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate

2. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

3. Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics

4. A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

5. Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

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1. Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor;Journal of Vacuum Science & Technology A;2018-09