A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors-Reference-Cited by-同舟云学术

A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Published:2009-05-20 Issue:5 Volume:48 Page:05DC01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayashida Tetsuro,Liu Yongxun,Matsukawa Takashi,Endo Kazuhiko,O'uchi Shinich,Sakamoto Kunihiro,Ishii Kenichi,Tsukada Junichi,Ishikawa Yuki,Yamauchi Hiromi,Suzuki Eiichi,Ogura Atsushi,Masahara Meishoku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference6 articles.

1. Threshold-Voltage Reduction of FinFETs by Ta/Mo Interdiffusion Dual Metal-Gate Technology for Low-Operating-Power Application

2. Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs

3. Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication

4. Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

5. Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics

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