Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses-Reference-Cited by-同舟云学术

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Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

Published:2007-06 Issue:6 Volume:28 Page:517-519
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liu Yongxun,Matsukawa Takashi,Endo Kazuhiko,Masahara Meishoku,O'uchi Shin-ichi,Ishii Kenichi,Yamauchi Hiromi,Tsukada Junichi,Ishikawa Yuki,Suzuki Eiichi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4212164/04212180.pdf?arnumber=4212180

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