Predictive Evaluation of Currents For Nano Multi FinFETs Under Geometry Variations

Abstract

Abstract Scaling of the transistor is a prime thrust for development of semiconductor industries. In this paper we have evaluated the impact of ION and IOFF current by applying process variation on different device parameters from 20-7nm of FinFET technology and study the behaviour of the digital circuit with scaling of technology. Here the impact on ION and IOFF current is investigated with the variation of Fins in FinFET transistors for High Performance (HP) and Lower Standby Power (LSTP) models along with applying 10% deviation from nominal values in different device parameters. The simulation results shows that by applying 10% deviation from nominal values of the geometric parameters Length (L) Width (WFin), Hight (HFin), Work Function (WFF), Thickness (TFin), and Source and Drain doping, affects ION current in HP N-FinFET of 20nm technology and has lowest Normalize Standard Deviation of 7% and LSTP P-FinFET in 7nm technology has highest 27% of Normalize Standard deviation. Results also shows that with 3% Normalized Standard Deviation in both HP (N,P FinFET) and LSTP (N,P FinFET) in WFF has an enormous impact on IOFF current i.e. Normalize Standard Deviation of 117% compared to variation in other device parameters which causes maximum Normalize Standard Deviation of 51% and minimum of 5%. Here variations in parameters are done taking 2,4,8,16 fins in FinFET. These experiments are carried on HSPICE simulator at 27°C temperature by using 20-7nm Berkley Predictive Technology Module.