Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories-Reference-Cited by-同舟云学术

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Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories

Published:2015-02-26 Issue:4S Volume:54 Page:04DD04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Yongxun,Nabatame Toshihide,Nguyen Num,Matsukawa Takashi,Endo Kazuhiko,O’uchi Shinichi,Tsukada Junichi,Yamauchi Hiromi,Ishikawa Yuki,Mizubayashi Wataru,Morita Yukinori,Migita Shinji,Ota Hiroyuki,Chikyow Toyohiro,Masahara Meishoku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=4S/a=04DD04/pdf

Reference47 articles.

1. FinFET SONOS flash memory for embedded applications

2. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

3. Sub-20 nm CMOS FinFET technologies

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure;Plasma Chemistry and Plasma Processing;2020-04-13

2. Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure;ECS Journal of Solid State Science and Technology;2017

3. (Invited) Floating Gate Type SOI-FinFET Flash Memories with Different Channel Shapes and Interpoly Dielectric Materials;ECS Transactions;2016-04-26

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