Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited onM-Plane Sapphire by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

Microstructural Characterization of Semipolar GaN Templates and Epitaxial-Lateral-Overgrown Films Deposited onM-Plane Sapphire by Metalorganic Vapor Phase Epitaxy

Published:2007-07-04 Issue:7A Volume:46 Page:4089-4095
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Vennéguès Philippe,Bougrioua Zahia,Guehne Tobias

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference26 articles.

1. Impact of nucleation conditions on the structural and optical properties ofM-plane GaN(11̄00) grown on γ-LiAlO2

2. Growth of monodispersed cobalt nanoparticles on 6H–SiC(0001) honeycomb template

3. 4H-polytype AlN grown on 4H-SiC(112̄0) substrate by polytype replication

4. Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy

5. Strain-induced polarization in wurtzite III-nitride semipolar layers

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