Impact of nucleation conditions on the structural and optical properties ofM-plane GaN(11̄00) grown on γ-LiAlO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1513874
Reference29 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
3. In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells
4. Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2
5. Conversion of gamma lithium aluminate to lithium aluminum carbonate hydroxide hydrate
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