High-Etching-Selectivity Barrier SiC (k<3.5) Film for 32-nm-Node Copper/Low-kInterconnects-Reference-Cited by-同舟云学术

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High-Etching-Selectivity Barrier SiC (k<3.5) Film for 32-nm-Node Copper/Low-kInterconnects

Published:2010-05-20 Issue:5 Volume:49 Page:05FD04
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakahira Junya,Nagano Shuji,Gawase Akifumi,Ohashi Yoshi,Shimizu Hideharu,Chikaki Shinichi,Oda Noriaki,Kondo Seiichi,Hasaka Satoshi,Saito Shuichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference16 articles.

1. Properties of High-Performance Porous SiOC Low-kFilm Fabricated Using Electron-Beam Curing

2. Low-kSiOCH Film Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisiloxane and Water Vapor

3. Vapor phase reactions in polymerization plasma for divinylsiloxane-bis-benzocyclobutene film deposition

4. Low Dielectric Constant Film Containing No Oxygen for Barrier-Free Cu Interconnects

5. A Robust Embedded Ladder-Oxide/Cu Multilevel Interconnect Technology for 0.13 µm Complementary Metal Oxide Semiconductor Generation

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1. Influence factors of film adhesion criterion of the nondestructive CZM-SAW technique;Japanese Journal of Applied Physics;2019-07-01

2. Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects;Plasma Processes and Polymers;2019-06-27

3. Highly reliable enhanced nitride interface process of barrier low-k using ultra-thin SiN with moisture blocking capability;Microelectronic Engineering;2013-12

4. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-kcap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects;Science and Technology of Advanced Materials;2013-03

5. Pore Narrowing of Mesoporous Silica Materials;Materials;2013-02-20

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