Material design of plasma-enhanced chemical vapour deposition SiCH films for low-kcap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects-Reference-Cited by-同舟云学术

Material design of plasma-enhanced chemical vapour deposition SiCH films for low-kcap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects

Published:2013-03 Issue:5 Volume:14 Page:055005
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Shimizu Hideharu,Nagano Shuji,Uedono Akira,Tajima Nobuo,Momose Takeshi,Shimogaki Yukihiro

Publisher

Informa UK Limited

Subject

General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1088/1468-6996/14/5/055005

Reference35 articles.

1. Plasma‐Enhanced Chemical Vapor Deposition of Organosilicon Thin Films from Tetraethoxysilane‐Oxygen Feeds

2. Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma

3. A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

4. Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents

5. High-Etching-Selectivity Barrier SiC (k<3.5) Film for 32-nm-Node Copper/Low-kInterconnects

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2. Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-01

3. The phase composition and physicochemical properties of transparent nanocomposite films of silicon oxycarbonitride;Journal of Structural Chemistry;2016-11

4. PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor;ECS Journal of Solid State Science and Technology;2014-11-25

5. Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects;ECS Journal of Solid State Science and Technology;2014-10-14