Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition-Reference-Cited by-同舟云学术

Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition

Published:2017-01 Issue:1 Volume:35 Page:01A101
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kim Hwanwoo¹,Song Hyoseok²,Shin Changhee³,Kim Kangsoo⁴,Jang Woochool²,Kim Hyunjung³,Shin Seokyoon²,Jeon Hyeongtag⁵

Affiliation:

1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea and Memory Division Thin film Technology Team, Samsung Electronics, Hwasung 18448, South Korea

2. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea

3. Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, South Korea

4. Memory Division Thin film Technology Team, Samsung Electronics, Hwasung 18448, South Korea

5. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea and Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4964889

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