SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition

Author:

Hsu Yu-Lin1ORCID,Chang Yao-Feng2ORCID,Chung Wei-Min1ORCID,Chen Ying-Chen3ORCID,Lin Chao-Cheng4,Leu Jihperng1ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Chiao Tung University, Hshinchu 30050, Taiwan

2. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA

3. Department of Electrical Engineering, School of Informatics, Computing, and Cyber Systems, Northern Arizona University, Flagstaff, Arizona 86011, USA

4. Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hshinchu 30050, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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