Reservoir computing using back-end-of-line SiC-based memristors-Reference-Cited by-同舟云学术

Reservoir computing using back-end-of-line SiC-based memristors

Published:2023 Issue:21 Volume:4 Page:5305-5313
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Guo Dongkai¹^ORCID,Kapur Omesh¹^ORCID,Dai Peng¹,Han Yisong²^ORCID,Beanland Richard²^ORCID,Jiang Liudi³,de Groot C. H. (Kees)¹^ORCID,Huang Ruomeng¹^ORCID

Affiliation:

1. School of Electronic and Computer Science, University of Southampton, Southampton, UK

2. School of Physics, Warwick University, Coventry, UK

3. School of Engineering, University of Southampton, Southampton, UK

Abstract

This work experimentally implements a physical reservoir computing system using a back-end-of-line SiC thin film based memristor to achieve pattern recognition with high accuracy.

Funder

Engineering and Physical Sciences Research Council

Royal Society

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MA/D3MA00141E

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1. Opportunities for neuromorphic computing algorithms and applications

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