Effects of Hydrogen Dilution Ratio on Properties of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Effects of Hydrogen Dilution Ratio on Properties of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition

Published:2007-07-13 Issue:No. 28 Volume:46 Page:L693-L695
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Miyajima Shinsuke,Sawamura Makoto,Yamada Akira,Konagai Makoto

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference15 articles.

1. Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

2. Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature

3. Low Substrate Temperature Deposition of Crystalline SiC using HWCVD

4. Low temperature deposition of nanocrystalline silicon carbide thin films

5. Preparation of microcrystalline Si1−xCx thin films

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