Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition

Published:2007-04-24 Issue:4B Volume:46 Page:1981-1983
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yang Chung-Mo,Yun Sang-Won,Ha Jong-Bong,Na Kyung-Il,Cho Hyun-Ick,Lee Heon-Bok,Jeong Jong-Hwa,Kong Sung-Ho,Hahm Sung-Ho,Lee Jung-Hee

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference5 articles.

1. Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film

2. Improvement of junction leakage of nickel silicided junction by a Ti-capping layer

3. The influence of Ti capping layers on CoSi2 formation

4. Formation of CoTi barrier and increased thermal stability of CoSi2 film in Ti capped Co/Si(100) system

5. Increased uniformity and thermal stability of CoSi2 thin films by Ti capping

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic Layer Deposition of Nickel Using a Heteroleptic Ni Precursor with NH3 and Selective Deposition on Defects of Graphene;ACS Omega;2019-06-25

2. Growth mechanism of hot wire-assisted atomic layer deposition of nickel to achieve conformal deposition on trenches: role of physisorption and chemisorption;Japanese Journal of Applied Physics;2019-06-24

3. Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl 2 (TMPDA) and Tert‐Butylhydrazine as Precursors;physica status solidi (a);2019-04

4. High growth per cycle thermal atomic layer deposition of Ni films using an electron-rich precursor;Nanoscale;2019

5. Electron-Blocking and Oxygen Evolution Catalyst Layers by Plasma-Enhanced Atomic Layer Deposition of Nickel Oxide;Advanced Materials Interfaces;2018-05-21

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