Formation of CoTi barrier and increased thermal stability of CoSi2 film in Ti capped Co/Si(100) system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121804
Reference12 articles.
1. Silicides for integrated circuits: TiSi2 CoSi2
2. Interdiffusion, Phase Transformation, and Epitaxial CoSi2 Formation in Multilayer Co/Ti‐Si(100) System
3. Epitaxial CoSi2films on Si(100) by solid‐phase reaction
4. Growth of epitaxial CoSi2on (100)Si
5. Epitaxial growth of CoSi2on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system
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1. Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor;Journal of Energy Chemistry;2013-05
2. Dependence of Sheet Resistance of CoSi2with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process;Japanese Journal of Applied Physics;2007-11-06
3. High quality epitaxial CoSi2 using plasma nitridation-mediated epitaxy: The effects of the capping layer;Journal of Applied Physics;2007-11
4. Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition;Japanese Journal of Applied Physics;2007-04-24
5. Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl;Journal of The Electrochemical Society;2007
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