Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor-Reference-Cited by-同舟云学术

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Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Published:2013-05 Issue:3 Volume:22 Page:403-407
ISSN:2095-4956
Container-title:Journal of Energy Chemistry
language:en
Short-container-title:Journal of Energy Chemistry

Author:

Park Jusang,Lee Han-Bo-Ram,Kim Doyoung,Yoon Jaehong,Lansalot Clement,Gatineau Julien,Chevrel Henri,Kim Hyungjun

Publisher

Elsevier BV

Subject

Electrochemistry,Energy (miscellaneous),Energy Engineering and Power Technology,Fuel Technology

Reference15 articles.

1. Effect of a Ge interlayer on the high-temperature behavior of NiSi films

2. Excimer Laser-Induced Ti Silicidation to Eliminate the Fine-Line Effect for Integrated Circuit Device Fabrication

3. Cobalt sputtering target and sputter deposition of Co thin films for cobalt silicide metallization

4. Formation of CoTi barrier and increased thermal stability of CoSi2 film in Ti capped Co/Si(100) system

5. A new cobalt salicide technology for 0.15-μm CMOS devices

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1. Selective Atomic Layer Deposition of Co Thin Films Using Co(EtCp)2 Precursor;Korean Journal of Materials Research;2024-03-27

2. Atomic layer deposition of magnetic thin films: Basic processes, engineering efforts, and road forward;Applied Physics Reviews;2023-12-01

3. Atomic Layer Deposition of Cobalt Film from Dicobalt-hexacarbonyl-tert-butylacetylene and Hydrogen;ECS Journal of Solid State Science and Technology;2023-11-01

4. Atomic layer deposition thin film techniques and its bibliometric perspective;The International Journal of Advanced Manufacturing Technology;2023-05-05

5. Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition;Materials Research Express;2022-10-01

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