Effect of a Ge interlayer on the high-temperature behavior of NiSi films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1810632
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4. A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Epilayer on Si Substrates;IEEE Transactions on Electron Devices;2012-09
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