Atomic Layer Deposition of Nickel Using a Heteroleptic Ni Precursor with NH3 and Selective Deposition on Defects of Graphene-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Nickel Using a Heteroleptic Ni Precursor with NH3 and Selective Deposition on Defects of Graphene

Author:

Kim Minsu^ORCID,Nabeya Shunichi¹²,Nandi Dip K.¹,Suzuki Kazuharu²,Kim Hyun-Mi,Cho Seong-Yong³,Kim Ki-Bum^ORCID,Kim Soo-Hyun¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 38541, Korea

2. Tanaka Kikinzoku Kogyo K.K., 22 Wadai, Tsukuba, Ibaraki 300-4247, Japan

3. Department of Materials Science and Engineering, Myongji University, Yongin, Gyeonggi 17058, Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

U.S. Army

Ministry of Science, ICT and Future Planning

Korea Semiconductor Research Consortium

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

Reference45 articles.

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