Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film-Reference-Cited by-同舟云学术

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Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film

Published:2006-04-25 Issue:4B Volume:45 Page:2975-2979
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Do Kwan-Woo,Yang Chung-Mo,Kang Ik-Su,Kim Kyung-Min,Back Kyoung-Hum,Cho Hyun-Ick,Lee Heon-Bok,Kong Sung-Ho,Hahm Sung-Ho,Kwon Dae-Hyuk,Lee Jong-Hyun,Lee Jung-Hee

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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2. Low temperature, area-selective atomic layer deposition of NiO and Ni;Journal of Vacuum Science & Technology A;2022-12

3. A low-temperature thermal ALD process for nickel utilizing dichlorobis(triethylphosphine)nickel(ii) and 1,4-bis(trimethylgermyl)-1,4-dihydropyrazine;Dalton Transactions;2022

4. Atomic layer deposition of transition metal films and nanostructures for electronic and catalytic applications;Critical Reviews in Solid State and Materials Sciences;2020-09-20

5. Atomic layer deposition of metals: Precursors and film growth;Applied Physics Reviews;2019-12

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