Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability-Reference-Cited by-同舟云学术

Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability

Published:2011-03-22 Issue:3 Volume:50 Page:03CB07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hung Ming-Chin,Hsiao Hsia-Tsai,Lin Wei-Ting,Tu Chun-Hao,Chang Jiun-Jye,Chen Po-Lun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

3. Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

4. The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

5. High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

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