Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer-Reference-Cited by-同舟云学术

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Reliable Bottom Gate Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors with TiO[sub x] Passivation Layer

Published:2009 Issue:9 Volume:12 Page:H348
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Seo Hyun-Sik,Bae Jong-Uk,Kim Dae-Hwan,Park YuJin,Kim Chang-Dong,Kang In Byeong,Chung In-Jae,Choi Ji-Hyuk,Myoung Jae-Min

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference15 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

4. Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

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