High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation-Reference-Cited by-同舟云学术

High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

Published:2008-08-04 Issue:5 Volume:93 Page:053505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Jaechul,Kim Sangwook,Kim Changjung,Kim Sunil,Song Ihun,Yin Huaxiang,Kim Kyoung-Kok,Lee Sunghoon,Hong Kiha,Lee Jaecheol,Jung Jaekwan,Lee Eunha,Kwon Kee-Won,Park Youngsoo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2962985

Reference16 articles.

1. ZnO-based transparent thin-film transistors

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4. Transparent thin-film transistors with zinc indium oxide channel layer

5. Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

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