Ferroelectric polarization-switching acceleration of sputtered Hf0.5Zr0.5O2 with defect-induced polarization of interlayer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference36 articles.
1. Transparent, high mobility InGaZnO thin films deposited by PLD;Suresh;Thin Solid Films,2007
2. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors;Suresh;Appl. Phys. Lett.,2007
3. High mobility indium free amorphous oxide thin film transistors;Fortunato;Appl. Phys. Lett.,2008
4. Highperformance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation;Park;Appl. Phys. Lett.,2008
5. High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes;Na;Appl. Phys. Lett.,2008
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1. Improving the endurance for ferroelectric Hf0.5Zr0.5O2 thin films by interface and defect engineering;Applied Physics Letters;2024-02-26
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